Crystal Type

Monocrystalline Silicon Wafer

Conductivity

P Type (Boron Doped)

Dimension

125mm×125mm±0.5mm Pseudo Square

Orientation

<100>±3°

Thickness

190μm±25μm

Diameter

150mm±0.5mm

TTV

≦ 40 μm

Warpage

≦ 60 μm

Saw Mark

≦ 20 μm

Oxygen Concentration

≦ 1.0×10E18 atms/cm3

Carbon Concentration

≦ 5.0×10E16 atms/cm3

Resistivity

0.5 ~ 3 ohms.cm; 3 ~ 6 ohms.cm

Monority Carrier Lifetime

≥ 10 μs (Ingot)

Square Angle

90°±0.5

Crack and Pinhole

No cracks and pin hole visible with the naked eyes

Edege Defect

Depth≦0.5mm, Lengh≦1.5mm, Less than 2 places

Wafer Surface

As-cut, cleaned; No dirt / oil strains, remain of soap / glue etc.