Crystal Type

Multicrystalline Silicon Wafer

Conductivity

P Type (Boron Doped)

Dimension

156mm×156mm±0.5mm Square

Orientation

Directional Solification System

Thickness

200μm±20μm

Diameter

219.2mm±0.5mm Bevel: 0.5~2mm in 45°

TTV

≦ 40 μm

Warpage

≦ 60 μm

Saw Mark

≦ 20 μm

Oxygen Concentration

≦ 1.0×10E18 atms/cm3

Carbon Concentration

≦ 5.0×10E17 atms/cm3

Resistivity

0.5 ~ 3 ohms.cm

Monority Carrier Lifetime

≥ 2 μs

Square Angle

90°±0.5

Crack and Pinhole

No cracks and pin hole visible with the naked eyes

Edege Defect

Depth≦0.5mm, Lengh≦1.5mm, Less than 2 places

Wafer Surface

As-cut, cleaned; No dirt / oil strains, remain of soap / glue etc.